Inversion of the impurity conductivity sign in As2Se3:Bi films deposited by two different methods

2012

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DOI 10.1134/s1063782612100028
Data confidence 70 medium
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Abstract

It is demonstrated that As2Se3:Bi x films deposited by thermal evaporation have p-type impurity conductivity, whereas films of the same composition, produced by ion-plasma cosputtering in vacuum exhibit n-type impurity conductivity. On the basis of these results, a new method is suggested for the fabrication of p-n homojunctions in film structures made of chalcogenide glassy semiconductors doped with bismuth in various ways.