Crystallization of β-SiC in thin SiC x layers (x = 0.03−1.40) synthesized by multiple implantation of carbon ions into silicon

Н. Б. Бейсенханов

2011

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DOI 10.1134/s1063784211020058
Data confidence 70 medium
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Abstract

The composition and structure of homogeneous SiC 1.4 , SiC 0.95 , SiC 0.7 , SiC 0.4 , SiC 0.12 , and SiC 0.03 layers obtained by multiple high-dose implantation of carbon ions with energies of 40, 20, 10, 5, and 3 keV into silicon are analyzed using Auger electron spectroscopy, X-ray diffraction, IR spectroscopy, and atomic force microscopy. The effect of decomposition of carbon and carbon-silicon clusters on the formation of Si-C tetrahedral bonds and on crystallization in silicon layers with high and low concentrations of carbon is considered.