Characterization of two-layer Al/TiN microwave kinetic inductance detectors

Mehdi Shafiee, B. Grossan, George F. Smoot, Albert Wai Kit Lau

2024

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DOI 10.1117/12.3018592
Data confidence 70 medium
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Abstract

In this paper we will present characterization of our Microwave Kinetic Inductance Detectors (MKIDs). The design process involved using Sonnet and LEdit 8.3. In this design, we employed a structure consisting of TiN (3nm)/Ti (10nm)/TiN(3nm) layers covered by a 100nm aluminum layer. This structure provides a kinetic inductance of 100 pH/Sqcm and a critical temperature of 1.1 Kelvin. The MKIDs were fabricated on 5-inch silicon wafers with a resistivity exceeding 15000 ohm cm. The designs cover three frequency regimes: 1-2 GHz, 2-4 GHz, and 3-6 GHz. This variation in frequency ranges allows us to study the improvement of quality factors and provides a range of frequencies for testing our electronics.