Observation of low-temperature diffusion of aluminum impurity atoms in hydrogen-implanted silicon

Yu.V. Gorelkinskii, Bulat N. Mukashev, Khabibulla A. Abdullin

1998

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DOI 10.1134/1.1187399
Data confidence 70 medium
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Abstract

Single-crystal samples of aluminum-doped silicon implanted with hydrogen at ∼80 K were examined by electron spin resonance (ESR). Two new ESR spectra labeled Si-AA15 and Si-AA16 were observed. The hyperfine structure of the spectra unambiguously reveals that two aluminum atoms and one aluminum atom are incorporated in the AA15 and AA16 defects, respectively. Observation of Al-Al pairs (the AA15 defect) is evidence in favor of long-range migration of aluminum atoms. The migration occurring in the experiment at T ⩽200 K cannot be normal or recombination-enhanced (injection-enhanced) diffusion. Tentative models including Al-Al interstitial pairs as well as a hydrogen-enhanced migration mechanism are discussed.