Studies of radiation defects in hydrogen implanted silicon by deep level transient spectroscopy

Bulat N. Mukashev, N. Fukuoka, Haruo Saito

1982

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DOI 10.1080/00337578208229928
Data confidence 70 medium
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Abstract

Defect levels produced in p-type silicon by 30 MeV ion implantation and their isochronal annealing behavior were studied by DLTS. Three hole traps located at Ev + 0.18 eV, Ev + 0.28 eV and Ev + 0.33 eV were introduced at the track end of ions. From comparison with other published data we attribute these levels to single positively charged divacancy (Ev + 0.18 eV), to Si-B3 (⟨100⟩ split-interstitial Ev + 0.28 eV), and to Si-A14 (divacancy-oxygen complex Ev + 0.33 eV). It was found that the introduction rate of observed defects shows a peak at the fluence of 5 × 1013 implanted ions and then decreases at higher fluence.