Range distribution characteristics of H+ and He++ ions with energies (5 to 2) × 103 keV implanted into silicon

1981

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DOI 10.1002/pssa.2210680109
Data confidence 70 medium
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Abstract

Detailed results of Monte-Carlo calculations on the depth distributions of H+ and He++ ions with energies (5 to 2) × 103 keV implanted in silicon are presented. The energy dependences of mean projected and total ranges, standart deviations and skewnesses are given among them. The Pearson's approximation of the calculated distributions is discussed.