Study of primary and secondary radiation defects formation and annealing inp-type silicon

Bulat N. Mukashev, L.G. Kolodin, K.H. Nussupov, A. V. Spitsyn, Victor S. Vavilov

1980

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DOI 10.1080/00337578008209154
Data confidence 70 medium
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Abstract

The creation and annealing of defects introduced at 78 and 280 K by 2 MeV electron irradiation of p-type silicon doped either by boron or by aluminium have been studied by using Hall effect, conductively and minority carrier diffusion length measurements. As following from analysis of kinetics of defect annealing and its correlation with published EPR spectra, IR absorbtion band and capacitance measurements, the mechanism of defect annealing and origin of some electronic levels have been discussed.