Noise analysis of CMOS-memristive and CMOS-resistive current mirrors

2018

Closed access Metadata (CSL-JSON)
DOI 10.1109/coconet.2018.8476814
Data confidence 70 medium
How this score is calculated

It is built from checkable properties of the record itself: whether the article has a DOI, how many independent sources confirmed its data, whether the required fields are filled in, and how recent the latest confirmation is. Disagreement between sources and a missing identifier lower it. A value of 80 or above means the record was published without further checking; 60 to 79 means it is published at reduced confidence, with a manual check advisable. A record verified by an editor by hand is never pushed below 90 by a recalculation. This scores our data about the article, not the article itself.

Abstract

The abundance of application of current mirror circuits in practice requires constant improvement of the circuit for dealing with various types of noise and disturbances. Such methods include introduction of CMOS, BJT, Memristors and other devices. Dealing with noise results in the improvement of a circuit's performance. This paper aims to analyze the noise behavior in the current mirror with CMOS-memristor circuit. It is primary focusing on the noise analysis in self-biased high swing cascode current mirror. The analysis includes identification of the noise characteristics in resistive and memristive CMOS current mirrors and further comparison of these characteristics. It is expected that CMOS-memristor circuit is more resistant to noise, comparing to its CMOS-resistor analog.