Аннотация
The abundance of application of current mirror circuits in practice requires constant improvement of the circuit for dealing with various types of noise and disturbances. Such methods include introduction of CMOS, BJT, Memristors and other devices. Dealing with noise results in the improvement of a circuit's performance. This paper aims to analyze the noise behavior in the current mirror with CMOS-memristor circuit. It is primary focusing on the noise analysis in self-biased high swing cascode current mirror. The analysis includes identification of the noise characteristics in resistive and memristive CMOS current mirrors and further comparison of these characteristics. It is expected that CMOS-memristor circuit is more resistant to noise, comparing to its CMOS-resistor analog.