Aluminum doped zinc oxide layers by atomic layer deposition and magnetron sputtering: formation and comparison of optoelectronic properties

Gauhar Mussabek

Physical Sciences and Technology, 2015

Full text Open access: Gold Metadata (CSL-JSON)

DOI 10.26577/2409-6121-2015-2-1-18-23

Data confidence 70 medium

How this score is calculated

It is built from checkable properties of the record itself: whether the article has a DOI, how many independent sources confirmed its data, whether the required fields are filled in, and how recent the latest confirmation is. Disagreement between sources and a missing identifier lower it. A value of 80 or above means the record was published without further checking; 60 to 79 means it is published at reduced confidence, with a manual check advisable. A record verified by an editor by hand is never pushed below 90 by a recalculation. This scores our data about the article, not the article itself.

Abstract

Thin films of aluminum-doped zinc oxide (AZO) were prepared using magnetron sputtering and atomic layer deposition (ALD) techniques. Atomic force microscopy (AFM) studies of AZO films surface morphology show that the surface of produced by ALDfilms is a smoother in comparison with films formed by magnetron sputtering.According to comparative analysis of optical transmittance spectra in the visible range of 300 - 800 nm, films formed by ALD technique demonstrates 10% higher transparency than those that obtained by magnetron sputtering. Investigation of samples electrical properties show that the conductivity of AZO films obtained by ALD technique actually two orders of magnitude higher than analogues obtained by magnetron sputtering.