Abstract
This study investigates the formation and characteristics of intrinsic oxide layers on the surface of n-type indium phosphide (InP), formed via electrochemical processing in a sulfuric acid environment. We have explored the oxide film's structure, chemical composition, and electronic properties using various analytical methods. The results indicate the formation of composite oxides with crackled morphologies and their impact on surface passivation. Our findings affirm the potential of InP native oxides for protective coatings yet highlight the need for further optimization to improve the uniformity and reduce the defectiveness of passivation layers.