Hydrogen-induced formation of defects nanoclusters in crystalline silicon

2001

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DOI 10.1016/s0921-4526(01)00686-x
Data confidence 70 medium
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Abstract

Low-temperature hydrogen-assisted clusterization of aluminum impurity in silicon has been studied. It was found that hydrogen can decrease the diffusion barrier of the Al atom and initiate the migration of Al atoms at 180–200 K. As a result, an interstitial aluminum pair formation takes place in H-implanted silicon. The implantation with a dose ⩾1×1016/cm2 causes formation of the clusters containing more than two aluminum atoms.