Molecular ion implantation into silicon

Bulat N. Mukashev, V.V. Smirnov, Sigfried Kalbitzer, M. Weiser, Rainer Börret, M. Behar

1990

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DOI 10.1080/10420159008213078
Data confidence 70 medium
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Abstract

The effect of molecular and atomic ion implantation into Si has been compared with respect to range and damage distribution and also, in case of dopant ions, the resulting electrical behavior after annealing treatments. The results obtained for implants of B+, F+ and BF2 − and N+ and N2 + in c-Si show that channeling effects are supporessed and electrical activity is enhanced when the molecular species is used. For a-Si:H implants with BF2 + a markedly higher conductivity is observed after annealing at 250°C than with B−, presumably due to chemical side effects by F.