Simulation of Electrical Characteristics of Switching Nanostructures "Pt – TiO – Pt" and "Pt – NiO – Pt" with Memory

Daulet Sergeyev, Nurgul Zhanturina

Radioengineering, 2019

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DOI 10.13164/re.2019.0714
Data confidence 70 medium
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Abstract

The nanostructures "Pt -TiO -Pt" and "Pt -NiO -Pt" with weak switching properties and memory were studied within the framework of semi-empirical Hückel method.The calculation was implemented in the program Atomistix ToolKit with Virtual NanoLab.The transmission spectra, current-voltage characteristics and differential conductivity of nanostructures are calculated.It was revealed that in the range of voltages -1.3 V÷1.3 V, a hysteresis appears in the form of eight shaped figure on the current-voltage characteristic of Pt -TiO -Pt nanostructure, and in Pt -NiO -Pt nanostructure, the hysteresis appears in the voltage intervals -1.8 V÷0.8 V and 0.9 V÷1.8 V in the form of two oval-shaped figures connected to a segment.The manifestation of the hysteresis characteristic of these nanocontacts shows that they have memory.It was found that a negative differential resistance is observed in the voltage range, where the hysteresis of the current-voltage characteristic is appeared.It is shown that the investigating nanostructures have weak switching properties.The results of the paper can be useful for the calculation of memristic elements of nanoelectronics.