Structural Features of Porous-GaAs and its Potential in Heterostructural Buffer Layers

2023

Closed access Metadata (CSL-JSON)
DOI 10.1109/elit61488.2023.10311022
Data confidence 85 high
How this score is calculated

It is built from checkable properties of the record itself: whether the article has a DOI, how many independent sources confirmed its data, whether the required fields are filled in, and how recent the latest confirmation is. Disagreement between sources and a missing identifier lower it. A value of 80 or above means the record was published without further checking; 60 to 79 means it is published at reduced confidence, with a manual check advisable. A record verified by an editor by hand is never pushed below 90 by a recalculation. This scores our data about the article, not the article itself.

Abstract

This study investigates porous gallium arsenide's structural and morphological properties. Based on EDX analysis data, it is established that Ga and As dominate the material composition, indicating its consistency with gallium arsenide, while there is a limited presence of oxygen. SEM analysis revealed a uniform distribution of pores on the surface, forming intricate tracks and chains. Although por-GaAs possess a porous structure, their crystalline properties, as demonstrated through XRD-spectroscopy, remain preserved and are similar to monocrystalline GaA$s$. The spectroscopic analysis detected vibrational processes characteristic of GaA$s$and features associated with the porosity and structure of por-GaAs.