Structural transformation of Si-rich SiNxfilm on Si via swift heavy ions irradiation

Danatbek Murzalinov, Abdirash T. Akilbekov, Alma K. Dauletbekova, Liudmila A. Vlasukova, Maksim Makhavikov, Maxim Vladimirovich Zdorovets

Materials Research Express, 2018

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DOI 10.1088/2053-1591/aab2f3

Data confidence 85 high

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Abstract

The effects of 200 MeV-Xe + irradiation with fluencies of (10 9 –10 14 ) cm −2 on the phase-structural transformation of Si-rich SiN x film deposited on Si substrate by low-pressure chemical vapor deposition have been reported. It has been shown from Raman scattering data that the swift heavy ions irradiation results in the dissolution of amorphous Si nanoclusters in nitride matrix. It has been shown, too, that the swift heavy ion irradiation leads to quenching a visual photoluminescence from nitride films.