GA Assisted ANN based GaN HEMT Model Development and Demonstration of its CAD Incorporation for Class-F Power Amplifier

Saddam Husain, Galymzhan Nauryzbayev, Mohammad Hashmi

2023

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DOI 10.1109/edtm55494.2023.10102998
Data confidence 70 medium
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Abstract

Gallium nitride (GaN) high electron mobility transistors (HEMTs) are quintessential prospect for the design of state-of-the-art power amplifiers (PAs). Within this context, this paper systematically investigates and realizes an integration of genetic algorithm aided artificial neural network based small-signal model into a computer-aided design (CAD) tool to elucidate the small-signal behaviour of a GaN HEMT employed class-F PA. Thereafter, an examination of amplifiers' stability and gain are expressed for the entire frequency of operation.