The Role of the Crystal Plane Irradiated by Swift Heavy Ions in the Formation of Defects in MgAl2O4 Crystals

Crystals, 2025

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DOI 10.3390/cryst15121020
Data confidence 85 high
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Abstract

Model experiments were performed on the interaction of swift heavy 220 MeV Xe ions with MgAl2O4 spinel crystal with (100), (110), and (111) planes. A computational analysis of the energy parameters of Xe ions in MgAl2O4 single crystal was performed, and an estimate of the ion range in the near-surface layer (14 μm) was provided. Optical absorption spectrum was analyzed using polarized light and EPR spectroscopy of initial and irradiated crystals. It has been established that at a fluence of 1013 cm−2 in a sample with an orientation plane (110), 35% more optically active F-type centers are formed. It has been shown that optically active centers V|Al–O− are observed in an unusual, polarized beam.