Abstract
Composite based on silicon carbide was irradiated with krypton ions with an energy of 280 keV fluence 1∙1013–5∙1015 cm-2. Irradiation leads to irradiation growth of the crystal lattice, as well as amorphization of the near-surface layer.
Microstructure and phase state of a composite based on silicon carbide irradiated with krypton ions
2022
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