Nonlinear electrical properties of nanostructured porous silicon films

Z. Zh. Zhanabaev, Margulan Ibraimov, Yerulan Sagidolda

2014

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DOI 10.26577/phst-2014-1-17

Data confidence 70 medium

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Abstract

Porous silicon films have been prepared by electrochemical etching. Morphology of the films has beenstudied by scanning probe microscope characterized by presence of self-similar structures with different scales from hundreds of nanometers to microns. Current-Voltage characteristic of nanofilms has several minima in contrast to the well-known effect of negative resistance in tunnel diodes. For theoretical description of the experimental results we suggest a new concept of "non-linear fractal".