Аңдатпа
Porous silicon films have been prepared by electrochemical etching. Morphology of the films has beenstudied by scanning probe microscope characterized by presence of self-similar structures with different scales from hundreds of nanometers to microns. Current-Voltage characteristic of nanofilms has several minima in contrast to the well-known effect of negative resistance in tunnel diodes. For theoretical description of the experimental results we suggest a new concept of "non-linear fractal".