LIGHT-EMITTING N-RICH SILICON NITRIDE FILMS DEPOSITED BY PLASMA-ENHANCED AND LOW-PRESSURE CVD

И. Н. Пархоменко, Fadei Fadeevich Komarov, Liudmila A. Vlasukova, O. V. Milchanin, Maxim A. Makhavikou, А. В. Мудрый, V. Zhyvulka, J. Żuk, P. Kopyciński, L. Toganbaeva

2014

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DOI 10.1615/hightempmatproc.2015015576

Data confidence 70 medium

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Abstract

N-rich silicon nitride films were deposited on Si wafers by plasma-enhanced (PECVD) and low-pressure chemical vapor deposition (LPCVD) techniques and, subsequently, annealed at 600°C. In spite of the same thickness and similar stoichiometric composition, the PECVD and LPCVD silicon nitride films differ in their light-emitting properties. The photoluminescence (PL) maxima lie in the red region and in the blue region for PECVD and LPCVD SiN1.5 films, respectively. The PL is most intensive for films deposited by PECVD. The characteristic features of the photoluminescence spectra of two sets of N-rich films are explained taking into account the contribution from the band tail states and defects in the silicon nitride matrix.