Abstract
The formation and self−organization of porous silicon (por-Si) surface mosaic structure at long anodic etching of p -type conductivity Si (100) ( p -Si) in electrolytes with an internal power source has been considered. We show that the formation of 3D islets of mosaic structure nanocrystallites of por-Si occurs with the participation of the adsorbed deposited silicon atoms formed as a result of disproportioning reactions at etching of silicon single crystals, as is the case for epitaxial growth of nanocrystallites with molecular beam deposition of silicon atoms on А 3 В 5 and Si semiconductor surface and their further spontaneous self−organization. We note the significant role of oxidation of the silicon surface in the formation and self−organization of a mosaic structure of por-Si during long-term anodic etching of p -Si (100) in HF : H2O2 electrolyte quantum−size and effects occurring in local areas of atomic rough surfaces real crystal silicon.