Kr and Xe ion induced aggregation processes in LiF crystals during irradiation and thermal annealing

Alma K. Dauletbekova, Abdirash T. Akilbekov, Maxim Vladimirovich Zdorovets, Ainash Abdrakhmetova

2010

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DOI 10.1088/1757-899x/15/1/012031
Data confidence 85 high
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Abstract

The efficiency of F and F n center creation in LiF crystals irradiated with 147 MeV Kr and 195 MeV ions was studied via ion fluence and flux. In the case of Kr ions with flux of 8.9 × 10 9 ions/(cm 2 × s) saturation of F centers (∼ 10 19 cm −3 ) was observed at a fluence of 10 12 ions/cm 2 . Further irradiation decrease the F center concentration. In LiF irradiated with both ions an enhancement of electron color centers ( F and F n ) via flux was observed. In LiF crystals irradiated with Kr ions an enhancement of F n centers was observed after thermal annealing up to 600 K. The mechanisms of the processes are discussed.