Influence of impurities on the photoluminescence of modified InP crystals

1999

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DOI 10.1134/1.1259318
Data confidence 70 medium
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Abstract

It is shown that a new emission band at 1.35 eV (77 K) is observed in the photoluminescence spectra of laser-modified InP crystals, irrespective of the type of impurity or its concentration in the initial crystal. It is established that the emergence of this band is a common property of the lattice defect state of the modified semiconductors.