Effect of laser-induced defects on luminescence in InP crystals

F. B. Baimbetov, N. G. Dzhumamukhambetov

1998

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DOI 10.1134/1.1187589
Data confidence 70 medium
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Abstract

Experimental data on luminescence in laser-modified InP crystals are compared with the theory of radiative recombination of heavily doped, compensated semiconductors. It is established that the band with maximum at 1.35 eV observed at 77 K is due to radiative transitions through the tails of the density of states which are formed as a result of the random distribution of defects and impurities showing up after laser treatment. The effective depth of the tails of the density of states is estimated to be equal to 67 meV.