Abstract
The results of structural and optical investigation of crystalline Si with embedded InSb nanocrystals are reported. These nanocrystals were synthesized in silicon matrix by means of high-fluence “hot” implantation of Sb and In ions followed by thermal treatment. TEM gives an evidence of nanocrystal formation in implanted and annealed samples as well as an existence of microtwins and dislocation-type defects and substantial residual mechanical strains. We have identified nanocrystals as InSb from RS data. Mechanical strains in “silicon – InSb nanocrystals” system have been evaluated, too.