Self-interstitials and Nanoclusters in Crystalline Silicon

2005

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DOI 10.1063/1.1994016
Data confidence 70 medium
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Abstract

The results of study of EPR spectra and electrical properties of crystalline silicon implanted with hydrogen are presented. It is shown that various extended defects are formed in hydrogen‐contained irradiated crystalline silicon as a result of hydrogen‐enhanced diffusion of intrinsic defects and impurity atoms.