Fabrication and characterization of a 83 MHz high temperature β-SiC MESFET operational amplifier with an AlN isolation layer on

K.K. Diogu, Gary L. Harris, Akshay Mahajan, I. Adesida, D. Moeller, R.A. Bertram

2002

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DOI 10.1109/drc.1996.546420
Data confidence 70 medium
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Abstract

Summary form only given. The fabrication of a high temperature analog integrated operational amplifier implemented in /spl beta/-SiC technology using depletion-only MESFETs is presented. The operational amplifier is implemented with 1 /spl mu/m gate geometries using direct write e-beam lithography to achieve high frequency operation. For the first time, compound MESFETs have been used as current sources and sinks at the various stages of the operational amplifier to provide high output impedance and hence increased circuit gain, while maintaining a reasonable unity gain frequency. Circuit design/simulation methods, circuit layout, device modeling, device parameter extraction methods and operational amplifier circuit fabrication techniques used to achieve excellent operational amplifier characteristics will be discussed in detail.