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1989
It is built from checkable properties of the record itself: whether the article has a DOI, how many independent sources confirmed its data, whether the required fields are filled in, and how recent the latest confirmation is. Disagreement between sources and a missing identifier lower it. A value of 80 or above means the record was published without further checking; 60 to 79 means it is published at reduced confidence, with a manual check advisable. A record verified by an editor by hand is never pushed below 90 by a recalculation. This scores our data about the article, not the article itself.
Abstract Various vacancy complexes are considered in crystalline silicon containing from one to four hydrogen atoms and possessing acceptor levels in the band gap. Their geometrical and electronic structure are calculated by the discrete variational Xα‐method in the cluster approach. It is concluded that for the creation of such acceptor states in the band gap of silicon it is necessary to use some appropriate experimental conditions.