Nature of Hydrogen Bonding in Si‐A‐Center

1989

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DOI 10.1002/pssb.2221530224
Data confidence 70 medium
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Abstract

Abstract The configurations containing one or two hydrogen atoms in a A‐center are calculated by the MNDO and Xα‐DV methods. It is established that the hydrogen atom is bound with the oxygen of the A‐center forming a new paramagnetic center. The electrical activity of the A‐center is decreased by hydrogen passivation of the two silicon dangling bonds. However, the defect states are not removed from the band gap.