Abstract
Photodiodes have found wide practical applications as sensing and information transmission technology in different environments. Viktor Brus and co-workers (article number 2202028) report a novel high-performance UV-vis-NIR heterojunction photodiode based on radiation-resistant functional semiconductor materials: TiN ‘window’ layer and CdZnTe photoactive layer. This work pushes the current detectivity–response time boundaries, defined by the long-standing materials science and device engineering problems in developing concurrently highly sensitive, fast-responding, and radiation-resistant optoelectronic devices based on compound semiconductors.