Excited States of a Hydrogen-Intrinsic Defect-Related Double Donor in Silicon

Serekbol Zh. Tokmoldin, Bulat N. Mukashev

1998

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DOI 10.1002/(sici)1521-3951(199812)210:2<307::aid-pssb307>3.0.co;2-0
Data confidence 70 medium
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Abstract

IR absorption due to electronic excitations of a hydrogen-intrinsic defect-related double donor (H-donor) in proton-implanted silicon is studied. It is shown that a broad feature at about 600 cm−1 is due to the ionization of the Es ≈︂ Ec — 0.1 eV and Et ≈︂ Ec — 0.06 eV levels while the 375 cm−1 band is related to the Es → Et excitation. It is concluded that the Es and Et levels are connected with ground spin-singlet and excited spin-triplet neutral states of the H-donor. An analysis of Si–H bond-stretching and bond-bending local vibrational modes allows us to suggest that the H-donor is an interstitial-type complex with two possible configurations with C2/Cs- or C2v-symmetry.