Electron backscatter diffraction in the silicon nanowires

K.K. Dikhanbayev, Vladimir A. Sivakov, Florian Talkenberg, Gauhar Mussabek, Ye. T. Taurbayev, N.N. Tanatov, Yerkin Shabdan

Physical Sciences and Technology, 2015

Full text Open access: Gold Metadata (CSL-JSON)

DOI 10.26577/2409-6121-2015-2-2-4-11

Data confidence 70 medium

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Abstract

In this paper we consider the formation on the surface of silicon by metal-induced chemical etching, the silicon nanowires and the study of their electron (SEM) and (TEM) microscopy, X-ray diffraction (EDX) analysis and electron backscatter diffraction (EBDS) in nanowires. Combination of field emission SEM and EBSD possible to determine the orientation of the individual grains, the local texture oriented correlation on solid surfaces of polycrystalline material. This method of producing silicon nanowires has a number of the above-mentioned advantages over other methods. In addition, the studied objects themselves exhibit interesting optical properties, such as the localization of light, photoluminescence (PL), very low reflectance ( 90% at 500 nm).