A Low Temperature Cell for High Frequency Electrophysical Measurements of Semiconductor Devices

Kazybek Aimaganbetov, Алдияров Абдурахман Уалиевич, Sultan Zhantuarov, N. Zh. Almasov, Е. И. Теруков, Nurlan Tokmoldin

2021

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DOI 10.1134/s0020441221050146
Data confidence 70 medium
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Abstract

Abstract A description of an experimental measuring cell designed to study the electrophysical characteristics of semiconductor elements at low temperatures is given. In contrast to traditional two-contact devices of this type, the developed experimental cell has three measuring contacts, which make it possible to carry out electrophysical measurements of flat and volumetric samples. The working temperature range of the cell is 16 K or higher. The impedance characteristics of heterojunction silicon and perovskite solar cells were measured in the frequency ranges from 100 Hz to 5 MHz and temperatures of 120–300 K. The measurement results are in satisfactory agreement with the literature data.