Morphology of porous silicon under long anodic etching in electrolyte with internal current source

K. B. Tynyshtykbaev, Yu. A. Ryabikin, Serekbol Zh. Tokmoldin, T. Aitmukan, Bagdat A. Rakhymetov, R. B. Vermenichev

2010

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DOI 10.1134/s1063785010060155
Data confidence 70 medium
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Abstract

The results of electron microscopy investigation of morphology of porous silicon (PS) received under long anodic etching by using internal current source in electrolytes such as HF:H 2 O 2 :H 2 C 5 OH and HF:H 2 O 2 are presented. Mosaic structure of nanoporous silicon is observed as the islands separated by silicon ledges. It was shown that these islands are presented as assemble of oxidized nanocrystallites and silicon ledges. The results of elemental analysis of islands of oxidized nanocrystallites and silicon ledges are presented.