Abstract
Data obtained to date on specific features of defect formation for hydrogenated single-crystal Si are analyzed. It was demonstrated that, in addition to other effects, interaction of H atoms with radiation defects and impurities leads to the formation of large clusters of three main types, namely, vacancy, interstitial, and impurity clusters. The main condition for formation of these clusters is the simultaneous presence of supersaturated solutions of H and defects in the sample. The interaction of H atoms with impurities and defects initiates the decomposition of the supersaturated solid solution of defects and impurities with the formation of precipitates. This leads to the formation of clusters, which are not observed in the absence of H. The mechanisms of formation and structure of clusters are discussed.