Abstract
The photoadsorption of O2 on SiO2 was investigated as a function of pre-treatment temperature varying from 200 to 1000 °C.The maximum photoadsorption activity was observed at a pre-treatment temperature of 800 °C.Photosorption activity is dependent on both intensity and wavelength of the incident light.The relationship between photoadsorption rate and wavelength follows a logarithmic trend.Dehydroxylation and dehydration of the silicon dioxide samples were studied using IR spectroscopy.It was found that UV irradiation leads to a decrease in the intensity of OH-group signals, while oxygen photoadsorption results in a partial restoration of surface hydroxyl groups.