Abstract
In recent years, semiconductors based on indium selenide have attracted significant attention in advanced research due to their unique electronic properties. Characteristics such as low effective electron mass, high thermal conductivity, and high photosensitivity are particularly pronouncedin two-dimensional (2D) InSe nanocrystals. However, challenges associated with their large-scale fabrication limit theirapplication in industrial technologies. In this work, the crystallization of amorphous InxSeythin films depositedby thermal evaporation is investigated throughannealing in an inert gas atmosphere to obtainlarge-area InSe and In₂Se₃ thin films. It is shownthat annealing films with an In/Se stoichiometry of 50/50 at 350 °C leads to the formation of the β-InSe phase, whereas films with a stoichiometry of 40/60 form a two-phase system consisting of β-In2Se3and γ-In2Se3under the same conditions.The kinetics of electrical resistance duringfilmcrystallizationis analyzed. Measurements ofthe temperature dependence of electrical resistance reveala sharp decrease in the resistance of the InSe filmnear 170-180°C, while theIn2Se3 film exhibitsa two-step decrease at approximately 150-190 °C and 270 °C. The results demonstratethe potential of these thin-film phase change materials for application in memory devices.