Effect of Bi addition on the switching effect and structure of thin Ge2Sb2Te5 films prepared by ion-plasma RF co-sputtering

Zhandos Tolepov, Oleg Yu. Prikhodko, Alexander V. Kolobov, G. A. Ismailova, Svetlana Peshaya, Nazim R. Guseinov, Ye. S. Mukhametkarimov, Alimzhan Kapanov, Suyumbika Ya. Maksimova

2024

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DOI 10.1016/j.jnoncrysol.2024.123167

Data confidence 70 medium

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Abstract

Ge 2 Sb 2 Te 5 (GST) films are widely used in non-volatile phase-change memory devices, their properties can be fine-tuned by element doping. In this work, current-voltage (I-V) characteristics of the switching process and the structure of phase-change GST films doped with Bi concentration from 0 to 9.2 at.% have been studied, the parameters of the switching process were found dependent on Bi content. The composition with Bi 6.3 at.% was found to have optimal values of power consumption and switching time. XRD and XPS analyses show that amorphous and crystalline phases in this material, unlike other compositions, are formed by very similar structural blocks with Bi atoms making chemical bonds only with Te atoms.