Аңдатпа
Ge 2 Sb 2 Te 5 (GST) films are widely used in non-volatile phase-change memory devices, their properties can be fine-tuned by element doping. In this work, current-voltage (I-V) characteristics of the switching process and the structure of phase-change GST films doped with Bi concentration from 0 to 9.2 at.% have been studied, the parameters of the switching process were found dependent on Bi content. The composition with Bi 6.3 at.% was found to have optimal values of power consumption and switching time. XRD and XPS analyses show that amorphous and crystalline phases in this material, unlike other compositions, are formed by very similar structural blocks with Bi atoms making chemical bonds only with Te atoms.