Abstract
The creation of a nanoporous silicon dioxide layer in the a-SiO2/Si-n structure was accomplished by irradiation with xenon ions at a cyclotron and then chemical etching with an aqueous solution of hydrogen fluoride with the addition of palladium. The truncated cone-shaped nanopores had diameters ranging from 486 to 509 nm. Then ZnS nanowires synthesized by electrochemical deposition (ECD) method, depending on the voltage at the electrodes of the electrolytic cell and as a result zinc sulfide nanowires with cubic structure and spatial symmetry group F-43m (216) were obtained. The sample is characterized by (111), (200), (220), (331) (311) planes, respectively, which is in good agreement with the cubic phase of ZnS. The charge-voltage characteristics (CVC) of ZnS showed that an n-type conductivity semiconductor was formed. Measurements of the photoluminescence (PL) spectra of ZnS were recorded on a CM 2203 spectrofluorimeter. The PL spectra were recorded in the range of 250 nm to 450 nm at room temperature. The PL spectra of the precipitated precipitates reveals emission in a wide UV-visible spectral range. It can be seen that the luminescence spectra have quite complex components and can be divided into five Gaussian curves. As can be seen the FL spectrum of the deposited ZnS consists of bands at 3.15 eV, 3.3 eV, 3.4 eV, 3.55 eV and 3.73 eV. Also analyzing the spectra energy dispersive analysis showed that the ZnS nanoproofs consist of Zn – 42.5% and S – 57.5%.