Теоретическое исследование свойств переноса заряда комплекса Si(DPP)2

2022

Full text Open access: Gold Metadata (CSL-JSON)
DOI 10.26577/rcph.2022.v81.i2.02
Data confidence 70 medium
How this score is calculated

It is built from checkable properties of the record itself: whether the article has a DOI, how many independent sources confirmed its data, whether the required fields are filled in, and how recent the latest confirmation is. Disagreement between sources and a missing identifier lower it. A value of 80 or above means the record was published without further checking; 60 to 79 means it is published at reduced confidence, with a manual check advisable. A record verified by an editor by hand is never pushed below 90 by a recalculation. This scores our data about the article, not the article itself.

Abstract

This article provides a study of the calculations of charge transport, reorganization energy, intermolecular transfer integral and charge mobility for the optimized structure of the new neutral hexacoordinated silicon complex Si(DPP)2. The main calculated and experimental geometric data on the optimized structure are also presented. The complex has a distorted octahedral geometry with short Si-N bond lengths averaging: calculated - 1.958365 Å and experimental - 1.9111 Å. The Si(DPP)2 structure contains two diphenylpyridine (DPP = 2,6-diphenylpyridine ligand) ligands. Optimization and computational calculations of the necessary data of charge transport were performed using a B3LYP functional and a 6-31G* basis set. Geometrical parameters for structure optimization were obtained from recent, known, experimental data. The obtained theoretical data on the charge transport of the Si(DPP)2 structure were compared with the known experimental data. Based on a comparison of the theoretical and experimental values for the charge transport properties of the Si(DPP)2 compound, it was shown that the method we used for calculating the charge mobility gives relatively close values. This work shows that computational methods can help in the further study of future structures, as well as predict the future parameters of as yet unexplored silicon complexes.