Abstract
The main purpose of the work is the circuit simulation of failures of on-board electronic equipment of spacecraft (SC) for various purposes under specified conditions and the parameters of the transistors of the memory element during the passage of a single cosmic ray particle (CR). Actuality of the problem. It is known that during the operation of spacecraft for various purposes, as a result of the impact of cosmic rays (CR), on-board electronic systems fail, which leads to abnormal situations, and in some cases to the loss of satellites, for example, KazSat -1 and Phobos-Grunt. Therefore, this paper uses the method of circuit modeling, which is a highly efficient and relatively low-cost method that allows us to evaluate the circuit parameters of the transistors of the memory element during the passage of a single cosmic ray particle. In this paper, we present the results of circuit failure modeling (SEU and SEL) under radiation exposure to storage devices (memory), which was carried out on the CMOS structure, which is the dominant one in the manufacture of ICS.