Abstract
This work presents the results of investigating the microstructure: film thickness, grain size, microre-lief on the boundary between silicide and silicon and on the silicide surface in the platinum film-bulk silicon system after rapid thermal processing (RTP) by halogen lamps in a nitrogen medium within the temperature range from 200 to 550°C with a step of 50°C and the treatment duration of 7 s. The influence of the selected temperature on the size of grains, specific features of conjugations of the closest of them, layout of the interface and the silicide surface, and on the imperfection of grains was determined. Resistivity was measured in the film-substrate system as a temperature function of rapid thermal processing. The heights of the Schottky barrier were determined in the silicide-silicon system as well as the current-voltage (I-V) parameters of the formed Schottky diodes were measured. Comparison was made between the obtained characteristics of microstructure and electrophysical properties of the examined systems and the systems formed under the conditions of the conventional furnace single-stage (550°C, 30 min) and double-stage (350°C, 180 min + 550°C, 30 min) thermal treatment.