Abstract
The formation and self-organization of a porous silicon (por-Si) surface mosaic structure in the long-term anodic etching of p-type conductivity Si (100) (p-Si) in electrolytes with an internal power source is considered. We show that the formation of 3D islets of mosaic structure nanocrystallites of por-Si occurs with the participation of the adsorbed deposited silicon atoms formed as a result of disporportionation reactions during the etching of silicon single crystals, as in the case of the epitaxial growth of nanocrystallites by molecular beam deposition of silicon atoms on the A III B V and Si semiconductor surface and their further spontaneous self-organization. The quantum-size effects occurring in the local areas of the atomically rough surfaces of a real silicon crystal are taken into account. We note the significant role of oxidation of the silicon surface in the formation and self-organization of a mosaic structure of por-Si during long-term anodic etching of p-Si (100) in the HF: H2O2 electrolyte.