Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons

2016

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DOI 10.1134/s106378261604014x
Data confidence 70 medium
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Abstract

It is shown that modulation of the superluminescence intensity on a characteristic time scale on the order of a few picoseconds may occur in a semiconductor because of relaxation oscillations that result from the “healing” of local perturbations of the quasi-Fermi distribution of nonequilibrium electrons in energy space. The conditions for observing this effect in GaAs are estimated.