Mechanisms for the creation of intrinsic electron-hole trapping centers in a CaSO4 crystall

Turlybek N. Nurakhmetov, Keleshek B. Zhangylyssov, A.M. Zhunusbekov, D.H. Daurenbekov, Temirulan T. Alibay, B.M. Sadykova, Bagila N. Yussupbekova, D.A. Tolekov

Eurasian journal of physics and functional materials, 2021

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DOI 10.32523/ejpfm.2021050308

Data confidence 85 high

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Abstract

The mechanism of creation of electron-hole trapping centers in CaSO4 at 15-300 K was investigated by the methods of vacuum-ultraviolet and thermoactivation spectroscopy. It is shown that electron-hole trapping centers are formed upon trap of electrons in the anionic complexes SO4− and localization of holes in the form of SO4− radical. Based on the measurement of the spectrum of excitation of long-wavelength recombination emission at 3.0-3.1 eV and 2.7 eV, the energy distance of the formed electron-hole trapping centers was estimated (4.43 eV and 3.87 eV).