Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current mode

S. A. Fefelov, L. P. Kazakova, Darina Arsova, S. A. Kozyukhin, K. D. Tséndin, Oleg Yu. Prikhodko

2016

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DOI 10.1134/s1063782616070046
Data confidence 70 medium
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Abstract

The I–V characteristics obtained for layers of chalcogenide vitreous semiconductor of the Ge–Sb–Te system in the current-generator mode are investigated. The instability region, i.e., the region of conductivity oscillations, observed in the case of the switching effect under conditions of a set current is revealed. The key parameters describing these oscillations and the conditions of their occurrence are investigated in detail. Analysis of the obtained data shows that, to explain the oscillations in the instability region, it is necessary to take into account an increase in the current density and the process of heat exchange between the current filament that arises in the film upon switching and the environment.