Abstract
In this work the effect of an intense pulsed ion irradiation with a high flux ∼10 20 cm −2 s −1 on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method and had amorphous structure. A part of deposited films was annealed in the air environment (900 °C, 1 h) for synthesis of β-Ga 2 O 3 phase. Obtained films were subjected to the intense pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 100 ns, current density on the target - up to 30 A/cm 2 , number of pulses - 3). The influence of irradiation on optical absorption and photoluminescence spectra, field and temperature dependencies of dark and photoconductivity were investigated. The probable nature of growth defects is discussed, and a scheme of electronic transitions that determine optical properties is proposed. • Gallium oxide films were deposited by RF-magnetron sputtering. • Scheme of local levels of growth defects and electronic transitions are suggested. • The films were irradiated by intense ion beam (C + /H + , 200 keV, 100 ns, 15–30 A/cm 2 ). • Optical and photoelectrical characteristics were modified by the irradiation.